摘要
Pockel’seffectandopticalrectificationinducedbythebuilt-inelectricfieldinthespacechargeregionofasiliconsurfacelayeraredemonstratedina{001}-cuthigh-resistancesiliconcrystal.Thehalf-wavevoltageisabout203V,deducedbyPockel’seffect.TheratioX2zxxX2zzziscalculatedtobeabout0.942accordingtoopticalrectification.OurcomparisonwiththeKerrsignalshowsthatPockel’ssignalismuchstronger.Thisindicatesthattheseeffectsaresoconsiderablethattheyshouldbetakenintoaccountwhendesigningsilicon-basedphotonicdevices.
出版日期
2016年01月11日（中国期刊网平台首次上网日期，不代表论文的发表时间）
