Etching Mechanisms of CF3 Etching Fluorinated Si： Molecular Dynamics Simulation-中国期刊网

摘要 MoleculardynamicssimulationsareperformedtoinvestigateCF3continuouslybom-bardingtheamorphoussiliconsurfacewithenergiesof10eV,50eV,100eVand150eVatnormalincidenceandroomtemperature.TheimprovedTersoff-Brennerpotentialswereused.Thesimu-lationresultsshowthatthesteady-stateetchingratesareabout0.019,0.085and0.1701for50eV,100eVand150eV,respectively.Withincreasingincidentenergy,atransitionfromC-richsurfacetoF-richsurfaceisobserved.IntheregionmodifiedbyCF3,SiFandCFspeciesaredominant.

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Etching Mechanisms of CF3 Etching Fluorinated Si： Molecular Dynamics Simulation

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Etching Mechanisms of CF3 Etching Fluorinated Si： Molecular Dynamics Simulation

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