Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi_2Te

摘要 Inthiswork,Bi2Te3films(250nm)arefabricatedonSiO2/Sisubstratesbyradiofrequency(RF)magnetronsputteringatroomtemperature,andthepreparedfilmsareannealedoverthetemperaturerangeof200°Cto400°C.Crystallinityandelectricalpropertiesofthefilmscanbetunedcorrespondingly.ThepowerfactorsofBi2Te3filmsof0.85μW/K2cmto11.43μW/K2cmwereachievedafterannealing.Theinfraredreflectancemeasurementsfrom2.5μmto5.0μmdemonstratethatthereisalsoaslightred-shiftoftheplasmaoscillationfrequencyintheBi2Te3films.Bymeansofplasmoniccalculations,weattributethered-shiftofabsorptionpeakstothereductionofcarrierconcentrationandthechangeofeffectivemassofBi2Te3filmswiththeincreasedannealingtemperature.

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Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi_2Te_3 Films

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Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi_2Te_3 Films

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