Linear dipole behavior of single quantum dots encased in metal oxide semiconductor nanoparticles films-中国期刊网

摘要 Understandingofcharge/energyexchangeprocessesandinterfacialinteractionsthatoccurbetweenquantumdots(QDs)andthemetaloxidesisofcriticalimportancetotheseQD-basedoptoelectronicdevices.Thisworkreportsonlineardipolebehaviorofsinglenear-infraredemittingCdSeTe/ZnScore/shellQDswhichareencasedinindiumtinoxide(ITO)semiconductorlianoparticlesfilms.Astrongpolarizationanisotropyinphotohiminescenceemissionisobservedbydefocusedwide-fieldimagingandpolarizationmeasuremen11echniques,andtheaveragepolarizationdegreeisupto0.45.Apossiblemechanismfortheobservationispresentedinwhichtheelectrons,locatingatsingleQDsurfacefromITObyelectrontransferduetotheequilibrationoftheFermilevels,resultinasignificantStarkdistortionoftheQDelectron/holewavefunctions.TheStarkdistortionresultsinthelinearpolarizationpropertyofthesingleQDs.TheinvestigationoflineardipolebehaviorforsingleQDsencasedinITOfilmswouldbehelpfulforfurtherimprovingQD-baseddeviceperformance.

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Linear dipole behavior of single quantum dots encased in metal oxide semiconductor nanoparticles films

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Linear dipole behavior of single quantum dots encased in metal oxide semiconductor nanoparticles films

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