High Power InGaAsP／GaAs SCH SQW Lasers-中国期刊网

摘要 InGaAsP/GaAsSCHSQWlaershavebeenpreparedbyLPMOCVD.Thedependenceofthresholdcurrentdensityoncavitylengthwasexplained.Laserdiodesarecharacterizedbytheoutputpowerof1W20W,thresholdcurrentdensity(Jth)of330A/cm^2to450A/cm^2andexternaldifferentialquantumefficiency(ηd)of35%to75%,andthesecharacteristicsareingoodagreementwiththedesignedrequirement.

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High Power InGaAsP／GaAs SCH SQW Lasers

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High Power InGaAsP／GaAs SCH SQW Lasers

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