摘要
Thecharacteristicsoflow-frequencyelectricalnoise,voltage-current(V-I)andelectricalderivationfor980nmInGaAsP/InGaAs/GaAshighpowerdoublequantumwelllasers(DQWLs)aremeasuredunderdifferentconditions.Thecorrelationofthelow-frequencyelectricalnoisewithsurfacenon-radiativecurrentofdevicesisdiscussed.Theresultsindicatethelow-frequencyelectricalnoiseof980nmDQWLswithhighpowerismainly1/fnoiseandhasgoodrelationwiththedevicesurfacecurrentatlowinjection.
出版日期
2001年04月14日(中国期刊网平台首次上网日期,不代表论文的发表时间)