摘要
Realizationofefficientyellow-light-emittingdiodes(LEDs)hasalwaysbeenachallengeinsolid-statelighting.Greatefforthasbeenmade,butonlyslightadvancementshaveoccurredinthepastfewdecades.AftercomprehensiveworkonInGaN-basedyellowLEDsonSisubstrate,wesuccessfullymadeabreakthroughandpushedthewall-plugefficiencyof565-nm-yellowLEDsto24.3%at20A∕cm~2and33.7%at3A∕cm~2.ThesuccessofyellowLEDscanbecreditedtotheimprovedmaterialqualityandreducedcompressivestrainofInGaNquantumwellsbyaprestrainedlayerandsubstrate,aswellasenhancedholeinjectionbya3DpnjunctionwithV-pits.
出版日期
2019年02月12日（中国期刊网平台首次上网日期，不代表论文的发表时间）
