Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition-中国期刊网

摘要 Thispaperpresentsamethodusingsimplephysicalvapourdepositiontoformhigh-qualityhafniumsiliconoxyni-tride(HfSiON)onultrathinSiO2bufferlayer.Thegatedielectricwith10A(1A=0.1nm)equivalentoxidethicknessisobtained.TheexperimentalresultsindicatethatthepreparedHfSiONgatedielectricexhibitsgoodphysicalandelectricalcharacteristics,includingverygoodthermalstabilityupto1000C,excellentinterfaceproperties,highdielectricconstant(k=14)andlowgate-leakagecurrent(Ig=1.9×103A/cm2@Vg=Vfb1VforEOTof10A).TaNmetalgateelectrodeisintegratedwiththeHfSiONgatedielectric.TheeffectiveworkfunctionofTaNonHfSiONis4.3eV,meetingtherequirementsofNMOSforthemetalgate.And,theimpactsofsputteringambientandannealingtemperatureontheelectricalpropertiesofHfSiONgatedielectricareinvestigated.

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Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

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Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

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