简介：本文用微波等离子化学气相沉积系统（MPCVD）在单晶硅衬底上制备多晶金刚石薄膜，反应气体为CH4和H2。利用扫描电镜（SEM）和Raman光谱研究了CH4流量和反应时间对多晶金刚石薄膜形貌和碳结构的影响。结果表明：随着CH4流量的增加，金刚石的成核密度增加，并出现二次形核，金刚石颗粒从单晶逐渐转变为多晶结构。多晶金刚石薄膜的生长过程为：生长初期在单晶硅衬底上形成非晶碳层，金刚石在非晶碳层上成核长大，并伴随着二次成核，最终形成多晶金刚石膜。

简介：ThediamondfilmsadherenttoSisubstratearedepositedwiththemicrowaveplasmaCVD(MPCVD)atmicrowavepowersof6000Wand4000Wfrom6hto10h,respectively,theinternalstressesofthefilmsaremeasuredbyXRD.Spectralpeakshiftandwideningareappliedtocalculatethemagnitudesofmacroandmicrostresses.Theresultsshowthatthemacrostressistensile.Theinternalstresscanbecontrolledbythemicrowavepower.Withthemicrowavepowerincreasing,theintrinsicandmacrostressesdecrease,andthemicrostressincreasessignificantly.Also,itcanbefoundthatthemacroandmicrostressesincreasewithdepositedtimewhentheotherconditionsarethesame.

简介：Alargediamondcrystalupto500μmindiameterwithasmooth(100)facetatitstophasbeensynthesizedonMosubstratethroughmicrowaveplasmachemicalvapordeposition(MPCVD).Itsmorphologyandqualitywerecharacterizedbyscanningelectronmicroscopy(SEM),andthegrowthmechanismwasroughlyillustratedfrombothmacroscopicandmicroscopicviewpoints.Itwasfoundthatmorphologicalinstabilitiesareamajorfactorresultinginsynthesisoflargediamondcrystals,moreover,highmicrowavepowerdensity(MPD),highCH4concentrations,highpressure,highsubstratesurfacetemperatureandtheadditionofasmallamountofO2werealsonecessaryforthesynthesisoflargediamondcrystals.

简介：摘要：本文针对现有的圆柱腔MPCVD设备，利用有限元电磁仿真软件，进行了电场分布仿真设计，优化了圆柱腔的结构，从而获得更为扁平的等离子体激发电场，来激发扁平的等离子体火球，增大生长面积，提升设备的生长效率。针对工业单晶金刚石刀具，优化了生长工艺。探索了甲烷浓度、生长温度、氮气浓度等因素对于工业级单晶金刚石生长的影响。最后我们选取了最优化参数，对所生长的样品进行了材料性能表征，拉曼图谱显示谱峰在1332.5cm-1附近，其半高宽为3.08cm-1，结果表明所制备的单晶金刚石具有良好的结晶性。