简介:AgraphGiscalledchromatic-choosableifitschoicenumberisequaltoitschromaticnumber,namelych(G)=χ(G).Ohba’sconjecturestatesthateverygraphGwith2χ(G)+1orfewerverticesischromaticchoosable.ItisclearthatOhba’sconjectureistrueifandonlyifitistrueforcompletemultipartitegraphs.Recently,Kostochka,StiebitzandWoodallshowedthatOhba’sconjectureholdsforcompletemultipartitegraphswithpartitesizeatmostfive.Butthecompletemultipartitegraphswithnorestrictionontheirpartitesize,forwhichOhba’sconjecturehasbeenverifiedarenothingmorethanthegraphsKt+3,2*(k-t-1),1*tbyEnotomoetal.,andKt+2,3,2*(k-t-2),1*tfort≤4byShenetal..Inthispaper,usingtheconceptoff-choosable(orL0-size-choosable)ofgraphs,weshowthatOhba’sconjectureisalsotrueforthegraphsKt+2,3,2*(k-t-2),1*twhent≥5.Thus,Ohba’sconjectureistrueforgraphsKt+2,3,2*(k-t-2),1*tforallintegerst≥1.
简介:K1,k┐FACTORIZATIONOFBIPARTITEGRAPHSDUBEILIANGAbstract.Inthispaper,anecessaryconditionforabipartitegraphλKm,ntobeK1,k-factoriz...
简介:SupposethatCisthecomplexplaneandkisanon-negativeinteger.DefinefunctionsNk-(x)=|x|kifkisevenandNk(x)=x|x|k-1ifkisodd.SomeapproximationpropertiesofNk-(x)’sisdiscussedandanewexampleofaTchebycheffsystemisgivenout.
简介:Inthispaper,asurfacepotentialbasedthresholdvoltagemodeloffully-depleted(FD)recessed-source/drain(Re-S/D)silicon-on-insulator(SOI)metal-oxidesemiconductorfield-effecttransistor(MOSFET)ispresentedwhileconsideringtheeffectsofhigh-kgate-dielectricmaterialinducedfringing-field.Thetwo-dimensional(2D)Poisson’sequationissolvedinachannelregioninordertoobtainthesurfacepotentialundertheassumptionoftheparabolicpotentialprofileinthetransversedirectionofthechannelwithappropriateboundaryconditions.Theaccuracyofthemodelisverifiedbycomparingthemodel’sresultswiththe2DsimulationresultsfromATLASoverawiderangeofchannellengthsandotherparameters,includingthedielectricconstantofgate-dielectricmaterial.