简介:YBa2Cu3Ox(YBCO)thinfilmsgrownondifferentsubstrateswithand/orwithoutEu2CuO4(ECO)bufferlayerwereinvestigatedbyX-raywideanglediffraction,reflection,diffusescatteringandtopography.TheresultsshowthatfortheyttriastabilizedZrO2(YSZ)substrate,thepresenceofanECObufferlayerimprovesthecrystallinequalityoftheYBCOfilm,whileanegativeeffectisobservedfortheSrTiO3(STO)substrate.ThelateralcorrelationlengthforasamplegrownonaYSZsubstratewithECObufferLayerismuchgreaterthangrownonanSTOsubetrate.TheSTOsubstrateusedhasmosaicstructure.2001ElsevierScienceB.V.Allrightsreserved.
简介:X-γradiationbelongtotheionizingradiation.Ionizingradiationsinkstoenergyinorganismbutproduceadisservicetotheorganism.Justasmedicine,thedisserviceoftheradiationtowardsOrganismisdecidedbytoacceptradiationquantify,theradiationquantifywasnameddose.Radiationprotection'sbasicmissionsistowanttoresultthedosetofixquantify.InthissurveythedoseatworkplaceanditssurroundingsenvironmentsofHL-2Adevicewasmeasuredandtheassessmentwasgivenout.
简介:SmallangleX-rayscatteringexperimentshavebeenperformedtostudythemicrostructureofmessoporoussilicameterialspreparedbycondensationoftetraethylorthosilicateusingnonionicalkylpolyethyleneoxide(AEO9)andioniccetyltrimethylammoniumbromide(CTAB)surfactantastemplates.Itistheporeswithinthenanometrerangethatproducethemaincattering.ThescatteringofthepuresilicasystemsobeyPorod’slaw.Thismaybebecausethetemplatesproducesomeadditionalscatteringbackgroundandthenmakethescatteringofporesdistorted.TheresultsshowthatthefullremovaloftemplatesfromtheporesofthematerialsbySoxhletextractionisveryeasyforAEO9,butitisdifficultforCTAB.Thepositivedeviationcorrectionisalsoperfromed.
简介:ThispaperresentsanewX-rayimagingmethodswingLaminography(SL)thatissuitalbletoperformnon-destructivetestingontheslender-shapedmulti-layersamples.ComputersimulationsaremadetocomparethelimitedprojectionsinSLandtheprincipleofchoosingOptimalProjectionAngularRegion(OPAR)isdiscussed.Theexperimentonatwo-layerPrintedCircuitsBoardshowsthatSLwith120°swinganglesdistributedinOPARcangettheseparatedimagesofeachlayer.
简介:Itisimpossibletodirectlyanalyzethemicrostructureofspin-valvemultilayersbasedonNi,F,CuandMnbyaconventionalX-raydiffractiontechniquebecausethelatticeparameterandatomicsatteringfactorsofthemareveryclose.Tosolvethisproblem,weuseanx-rayanomalousdiffractiontechniquetocharacterizethemicrostructuresofthe[Ni80Fe20/Fe50Mn50]15and[Ni80Fe20/Cu]15superlatticesystems.Theresultsshowthatmorediffractionpeaksandhigherinternsityinthereflectivetyprofileareobservedwhentheincidentenergyisclosetotheabsorptionedgeofthelighterelement(Mn)in[Ni80Fe20/Fe50Mn50]15multilayersystemsandtotheabsorptionedgeoftheheavierelement(Cu)inthe[Ni80Fe20/Cu]15multilayersystems.Theinterfaceandperiodicstructureof[Ni80F20/Fe50Mn50]15aremoreperfectthanthatofthe[Ni80Fe20/Cu]15superlattices.Theaboveresultsaredisussedinthispaper.
简介:Small-angleX-rayscattering(SAXS)usingsynchrotronradiationasX-raysourcehasbeenemployedtocharactcizcthemicroscopicstructrureoforgano-modifiedmesoporousmolecularsieves(organo-MSU-X)preparedbyaone-pottemplate-directedsynthesis.ItisshownthattheSAXSprofileishardlyconstantwithPorod’slawshowinganegativeslope,i.e.,negativedeviation.Thissuggeststhatthereisdiffuseinterfaciallayerlocatedbetweentheporesandthematrix.Thissuggeststhattheorganicgroupsremaincovalentlylinkedtothematrix,asindicatedby^29SiCPMASNMRandFT-IR.Theaveragethicknessoftheinterfaciallayerwasfoundtobeabout1nmforeachofthethreesampleswithdifferentkindsandthesameamounts(20?oforganicgroups.Thiskindofmaterialhasalsobeenprovedtopossessbothsurfaceandmassfractalstructureoftheamophousporoussilicamaterials.2001ElsevierScienceB.V.Allrightsreserved.
简介:O434.122006065468强脉冲软X光辐照薄塑料闪烁体发光特性研究=LinearluminescenceforthinplasticscintillatorsunderintensesoftX-rayirradiation[刊,中]/宁家敏(中物院核物理与化学研究所.四川,绵阳(621900)),蒋世伦…//强激光与粒子束.—2006,18(7).—1215-1218介绍了Z-pinch实验用软X光功率仪的测量原理,利用“强光一号”产生的强脉冲软X光对薄塑料闪烁体((?)40min×0.1mm)进行了辐照。实验中,采用两套软X光功率仪并安装在同一个大法兰面上.其中一套作为标准系统,参数保持不变,另一套系统的狭缝宽度逐渐增加,以改
简介:ThefabricationofX-raymasksisacriticalandchallengingprocessinLIGAtechnique.Asinductivelycoupledplasma(ICP)deepetchingappearstobethemostsuitablesourcefordeepsiliconetching,wefabricatedanewtypeX-raymaskusingthistechnique.IncomparisonwithothertypesofX-raymasks,themaskwefabricatedhastheadvantagesofitslowcostanditssimplefabricationprocess.BesiredmicrostructureshavealsobeenfabricatedusingthisnewtypeX-raymaskinLIGAtechnique.
简介:ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.