简介：InorganicbufferlayerssuchasSiO2orTiO2andtransparentconductiveindium-tin-oxide(ITO)filmswerepreparedonpolyethyleneterephthalate(PET)substratesbyionassisteddeposition(IAD)atroomtemperature,andtheeffectsofSiO2andTiO2onthebendingresistanceperformanceofflexibleITOfilmswereinvestigated.TheresultsshowthatITOfilmswithSiO2orTiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithoutthebufferlayerwhentheITOfilmsareinwardsbentatabendingradiusmorethan1.2cmandwhentheITOfilmsareoutwardsbentatabendingradiusfrom0.8cmto1.2cm.ITOfilmswithSiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithTiO2bufferlayeraftertheITOfilmsarebentseveralhundredsofcyclesatthesamebendingradius,fortheadhesionofSiO2isstrongerthanthatofTiO2.ThecompressivestressresultedfrominwardbendingleadstotheformationofmoredefectsintheITOfilmscomparedwiththetensilestressarisingfromoutwardbending.SiO2andTiO2bufferlayerscaneffectivelyimprovethecrystallinityofITOfilmsin(400),(440)directions.

简介：Flexiblethin-filmsupercapacitorswithhighspecificcapacitancearehighlydesirableformodernwearableormicro-sizedelectricalandelectronicapplications.Inthiscontribution,Ni-Cohydroxides(NCH)nanosheetsweredepositedontopofNi-Cualloy(NCA)nanowirearraysformingafreestandingthin-filmcompositeelectrodewithhierarchicalstructureforsupercapacitors.Duringelectrochemicalcycling,thedissolutionofCuintoCuionswillcreatemoreactivesitesonNCA,andtheredepositedcopperoxidecanbecoatedontoNCH,givingrisetosubstantialincreaseinspecificcapacitancewithcycling.Meanwhile,NCAandNCHhaveexcellentconductivity,thusleadingtoexcellentrateperformance.Thisflexiblethin-filmelectrodedeliversanultrahighinitialspecificcapacitanceof0.63F·cm~(-2)(or781.3F·cm~(-3)).Duringcharge-dischargecycles,thespecificcapacitancecanincreaseupto1.18F·cm~(-2)(or1475F·cm~(-3))alongwiththe'self-etching'process.Theelectrodepresentsabetterspecificcapacitanceandratecapabilitycomparedwithpreviouslyreportedflexiblethin-filmelectrode,andthisnoveldesignofetchingtechniquemayexpandtootherbinaryorternarymaterials.