Thefinite-differencetime-domainmethodwasemployedtocalculatelightextractionefficiencyofthin-filmflip-chipInGaN/GaNquantumwelllight-emittingdiodes(LEDs)withTiO2microspherearrays.TheextractionefficiencyforLEDswithmicrospherearrayswasinvestigatedbyfocusingontheeffectofthepackingdensity,packingconfiguration,anddiameter-to-periodratio.Thecomparisonstudiesrevealedtheimportanceofhavingahexagonalandclose-packedmonolayermicrospherearrayconfigurationforachievingoptimumextractionefficiency,whichtranslatedintoa3.6-foldenhancementinlightextractioncomparedtothatforaplanarLED.ThisimprovementisattributedtothereducedFresnelreflectionandenlargedlightescapecone.Theengineeringofthefar-fieldradiationpatternswasalsodemonstratedbytuningthepackingdensityandpackingconfigurationofthemicrospherearrays.