简介：Byusingtheultrasound-assistedliquidphaseexfoliationmethod,Bi2Te3nanosheetsaresynthesizedanddepositedontoaquartzplatetoformakindofsaturableabsorber（SA）,inwhichnonlinearabsorptionpropertiesaround2μmareanalyzedwithahome-mademode-lockedlaser.Withtheas-preparedBi2Te3SAemployed,astablepassivelyQ-switchedall-solid-state2μmlaserissuccessfullyrealized.Q-switchedpulseswithamaximumaverageoutputpowerof2.03Waregeneratedunderanoutputcouplingof5%,correspondingtothemaximumsingle-pulseenergyof18.4μJandpeakpowerof23W.Thedeliveredshortestpulsedurationandmaximumrepetitionrateare620nsand118kHzunderanoutputcouplingof2%,respectively.ItisthefirstpresentationofsuchBi2Te3SAemployedinasolid-stateQ-switchedcrystallinelaserat2μm,tothebestofourknowledge.Incomparisonwithother2Dmaterialssuitableforpulsed2μmlasers,thesaturableabsorptionperformanceofBi2Te3SAisprovedtobepromisingingeneratinghighpowerandhigh-repetition-rate2μmlaserpulses.

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简介：Wehavedemonstratedahigh-average-power,high-repetition-rateopticalterahertz（THz）sourcebasedondifferencefrequencygeneration（DFG）intheGaSecrystalbyusinganear-degenerate2μmintracavityKTPopticalparametricoscillatorasthepumpsource.Thepowerofthe2μmdual-wavelengthlaserwasupto12.33Wwithcontinuoustuningrangesof1988.0–2196.2nm/2278.4–2065.6nmfortwowaves.DifferentGaSecystallengthshavebeenexperimentallyinvestigatedfortheDFGTHzsourceinordertooptimizetheTHzoutputpower,whichwasingoodagreementwiththetheoreticalanalysis.Basedonan8mmlongGaSecrystal,theTHzwavewascontinuouslytunedfrom0.21to3THz.ThemaximumTHzaveragepowerof1.66μWwasobtainedatrepetitionrateof10kHzunder1.48THz.Thesinglepulseenergyamountedto166pJandtheconversionefficiencyfrom2μmlasertoTHzoutputwas1.68×10-6.Thesignal-to-noiseratioofthedetectedTHzvoltagewas23dB.TheacceptanceangleofDFGintheGaSecrystalwasmeasuredtobe0.16°.

简介：该规划的目的是重新研究物理教育的内容和结构，这是由于在三个方面有了重大的发展：①过去的三十年里，物理知识爆炸性地增长；③认知心理学的研究，对学习进程有了新的认识，③计算机技术及其功能不断提高。

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简介：ZnOfilmscontainingErandGenanocrystals（nc-Ge）weresynthesizedandtheirphotoluminescence（PL）propertieswerestudied.Visibleandnear-infraredPLintensitiesarefoundtobegreatlyincreasedinnc-Ge-containingfilm.Er-related1.54μmemissionhasbeeninvestigatedunderseveralexcitationconditionsupondifferentkindsofGe,ErcodopedZnOthinfilms.1.54μmPLenhancementaccompaniedbytheappearanceofnc-Geimpliesasignificantcorrelationbetweennc-GeandPLemissionofEr3+.Theincreasedintensityof1.54μminGe:Er:ZnOfilmisconsideredtocomefromthejointeffectofthelocalpotentialdistortionaroundEr3+andthepossibleenergytransferfromnc-GetoEr3+.