简介:theAlternatingSegmentCrank-Nicolsonschemeforone-dimensionaldiffusionequationhasbeendevelopedin[1],andtheAlternatingBlockCrank-Nicolsonmethodfortwo-dimensionalproblemin[2].Themethodshavetheadvantagesofparallelcomputing,stabilityandgoodaccuracy.Inthispaperforthetwo-dimensionaldiffusionequation,thenetregionisdividedintobands,aspecialkindofblock.ThismethodiscalledthealternatingBandCrank-Nicolsonmethod.
简介:Thestudyonthedecaypropertiesofnewisotopeslocatedfarfromthebetastabilitylineiscurrentthefocusofnuclearphysics.ForisotopesintheregionZ>82andN<126,-emissionprevailsasradioactivedecaymodeand-spectroscopyisthemostimportanttooltoobtaininformationonthenuclearstructure.IntheheavynucleiregionwithN=124and126isotones,anintruderstate(h9=2.f7=2)8+basedontheattractiveinteractionoff7=2protonsandf5=2neutronshasbeensignificantlyobserved,whichincreasesthebindingenergyofthisconfigurationwithincreasingprotonnumber.
简介:U-shapedmicro-nanochannelscangeneratesignificantflowdisturbanceaswellaslocallyamplifiedelectricfield,whichgivesitselfpotentialtobemicrofluidicmixers,electrokineticpumps,andevencelllysisprocess.NumericalsimulationisutilizedinthisworktostudythehiddencharacteristicsoftheU-shapedmicro-nanochannelsystem,andtheeffectsofkeycontrollingparameters(theexternalvoltageandpressure)onthedeviceoutputmetrics(current,maximumvaluesofelectricfield,shearstressandflowvelocity)wereevaluated.Alargeportionofcurrentflowingthroughthewholesystemgoesthroughthenanochannels,ratherthanthemiddlepartofthemicrochannel,withitsvalueincreasinglinearlywiththeincreaseofvoltage.Duetothelocaliondepletionnearmicro-nanofluidicjunction,significantlyenhancedelectricfield(asmuchas15foldatV=1VandP0=0)aswellasstrongshearstress(leadingtoelectrokineticflow)isgenerated.Withincreasingexternalpressure,bothelectricfieldandshearstresscanbeincreasedinitially(duetoshorteningofdepletionregionlength),butaresuppressedeventuallyathigherpressureduetothedestructionofiondepletionlayer.Insightsgainedfromthisstudycouldbeusefulfordesigningnonlinearelectrokineticpumpsandothersystems.
简介:Modelinglog-mortalityratesonO-UtypeprocessesandforecastinglifeexpectanciesareexploredusingU.S.data.IntheclassicLee-Cartermodelofmortality,thetimetrendandtheage-specificpatternofmortalityoveragegrouparelinear,thisisnotthefeatureofmortalitmodel.Toavoidthisdisadvantage,O-Utypeprocesseswillbeusedtomodelthelog-mortalityinthispaper.Infact,thismodelisanAR(1)process,butwithanonlineartimedriftterm.BasedonthemortalitydataofAmericafromHumanMortalitydatabase(HMD),mortalityprojectionconsistentlyindicatesapreferenceformortalitywithO-UtypeprocessesoverthosewiththeclassicalLee-Cartermodel.Bymeansofthismodel,thelowboundsofmortalityratesateveryagearegiven.Therefore,lengtheningofmaximumlifeexpectanciesspanisestimatedinthispaper.
简介:Threeheterobinuclearcomplexesweresynthesized,namely[Cu(oxpn)Co(L)2](ClO4)2·xH2O(L=2,2’-bipyridyl(bpy),1,10-phenanthroline(phen),and5-nitro-1,10-phenanthroline(NO2-phen)),whereoxpnrepresentsN,N’-bis(3-aminopropyl)oxam-ido.Basedon1R,elementalanalysis,conductivitymeasurementandelectronicspectra,thesecomplexeswerecharacterizedbyanextendedoxamido-bridgedstructurewithCu(Ⅱ)inaplanarenvironmentandCo(Ⅱ)inaoctahedralenvironment.ThesymmetryofthecationisveryclosetoC2v.Thecomplexeswerealsocharacterizedwithvariabletemperature(4~300K)magneticsusceptibility,andthedatawerefitforthesusceptibilityequationderivedfromspinHamilton,H=-2JS1.S2-DSx12byleastsquarestrategy.Theexchangeintegral,J,wasfoundtobe-22.36cm-1(forbpy);-15.45cm-1(forphen);-19.10cm-1(forNO2-phen),indicatingthatthereisaweakantiferromagneticspin-exchangeinteractionbetweenthemetalions.
简介:TomoreindepthunderstandthedopingeffectsofoxygenonSiGealloys,boththemicro-structureandpropertiesofO-dopedSiGe(including:bulk,(001)surface,and(110)surface)arecalculatedbyDFT+Umethodinthepresentwork.Thecalculatedresultsareasfollows.(i)The(110)surfaceisthemainexposingsurfaceofSiGe,inwhichOimpuritypreferstooccupythesurfacevacancysites.(ii)ForOinterstitialdopingonSiGe(110)surface,theexistencesofenergystatescausedbyOdopinginthebandgapnotonlyenhancetheinfraredlightabsorption,butalsoimprovethebehaviorsofphoto-generatedcarriers.(iii)ThefindingaboutdecreasedsurfaceworkfunctionofO-dopedSiGe(110)surfacecanconfirmpreviousexperimentalobservations.(iv)Inallcases,Odoingmainlyinducestheelectronicstructuresnearthebandgaptovary,butisnotdirectlyinvolvedinthesevariations.Therefore,thesefindingsinthepresentworknotonlycanprovidefurtherexplanationandanalysisforthecorrespondingunderlyingmechanismforsomeoftheexperimentalfindingsreportedintheliterature,butalsoconducetothedevelopmentofμc-SiGe-basedsolarcellsinthefuture.
简介:Study on IMF Emission in 30 MeV/u 40Ar Induced ReattionsStudyonIMFEmissionin30MeV/u40ArInducedReattions¥ZhuYongtai;XuHus...
简介:Thebeamof35MeV/u~(40)ArwasdeliveredbyHIRFL(HeavyIonResearchFacilityatLanzhou).Atargetof674μg/cm~(2197)Auwasusedintheexperiment.Theexperimentwasmadeattheterminaloflargecylindeicalscatteringchamber,inwhichsixtelescopesareusedtomeasurechargedparticlesemittedintherearandmiddle
简介:Statistical Threefold nagmentation in 25 MeV/u 40Ar Induced ReactionsStatisticalThreefoldnagmentationin25MeV/u40ArInduce...