Field Emission Properties of Nitrogen-doped Amorphous Carbon Films

Nitrogen-dopedamorphouscarbonthinfilmsaredepositedontheceramicsubstratescoatedwithTifilmbyusingdirectcurrentmagnetronsputteringtechniqueatN2andArgasmixtureatmosphereduringdeposition.Thefieldemissionpropertiesofthedepositedfilmshavebeeninvestigated.Thethresholdfieldaslowas5.93V/μmisobtainedandthemaximumcurrentdensityincreasesfrom4μA/cm2to20.67μA/cm2at10.67V/μmcomparingwithundopedamorphousfilm.Theresultsshowthatnitrogendopingplaysanimportantroleinfieldemissionofamorphouscarbonthinfilms.